Merak3040
The Merak3040 series is a high-performance, large-format CMOS flat panel detector that utilizes advanced, high-precision stitching technology and extensive scintillator coupling processes. Its characteristics of low noise, high precision, high rate, low power consumption, and parallel readout circuitry enable it to efficiently capture subtle details and provide accurate image information while ensuring low energy usage. Additionally, it features performance optimization processing, ded image processing, 10G network image transmission, and redundant backup design, offering more convenient and reliable image processing and transmission methods. Due to its exceptional imaging capabilities, the Merak3040 series is widely used in high-end medical imaging and other fields.
Product Features
100µm pixel size
4320×3000 pixel matrix
Applications
- DSA
- Ear, Nose, and Throat CBCT
- Other specialty CBCT
Specfication
Transducers
Type
CMOS
Pixel size
100µm
Pixel matrix
4320×3000
Effective area
432×300mm²
Scintillator
CsI
Energy Range
40kV~125kV
Function
Acquisition mode
Continuous/Synchronous
Trig mode
Internal/External
ROI
Programmable size and locatio
Other
Power supply
DC24V±10%
Consumption
TBD
Usage environment
+10ºC~+40ºC
Storage environment
-20ºC~+55ºC
Product Comparison
Comparison
Model | Type | Pixel size | Pixel matrix | Effective area | Rate | Scintillator | Irradiation lifetime | Energy Range | Acquisition mode | Trig mode | ROI | Interface | Power supply | Consumption | Usage environment | Storage environment | Weight | External dimensions(W×L×H) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Merak1313 | CMOS | 100μm | 1280×1280 | 128×128 mm² | CsI | 40kV~120kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口,GigE 1G) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
Merak1412 | CMOS | 100μm | 1404×1204 | 140.4×120.4mm² | CsI | 40kV~120kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口,GigE 1G) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
Merak1215A | CMOS | 49.5μm | 2940×2342 | 115.9×145.5 mm² | CsI | 20kV~90kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口,GigE 1G) | DC12V±10% | ≤6W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
Merak1613S | a-Si (TFT) | 125μm | 1274×1024 | 159.3×128 mm² | CsI | 40kV~125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45 (以太网协议接口,GigE 1G) | DC24V±10% | ≤12W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
Merak1615 | CMOS | 100µm | 1600×1500 | 160×150mm² | CsI | 40kV~125kV | 连续触发/触发模式 | 内触发/外触发 | X×Y [X列数、Y行数,X、Y=2n,最小为16] | RJ45 (以太网协议接口,GigE 1G) | DC12V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
Merak1917Z | IGZO (TFT) | 120µm | 1536×1386 | 184.3×166.3mm² | CsI | 40kV~125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45(以太网协议接口,GigE 1G) | DC24V±10% | ≤10W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
Merak2121 | CMOS | 135µm | 1504×1560 | 203×211mm² | CsI | 40kV~125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45(以太网协议接口,GigE 1G) | DC(12V~24V)±10% | ≤15W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
Merak3030 | CMOS | 100µm | 3240×3000 | 324×300mm² | CsI | 40kV~125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45(以太网协议接口,GigE 10G) | DC24V±10% | ≤30W | +10ºC~+40ºC | -20ºC~+55ºC | |||||
Merak3030Z | IGZO (TFT) | 148µm | 2048×2048 | 303.1×303.1mm² | Csl | 40kV~125kV | 连续触发/触发模式 | 内触发/外触发 | 自定义任意尺寸 | RJ45(以太网协议接口,GigE 10G) | DC24V±10% | ≤20W | +10ºC~+40ºC | -20ºC~+55ºC |